LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? description the LX5510 is a power amplifier optimized for wlan applications in the 2.4-2.5 ghz frequency range. the pa is implemented as a two-stage monolithic microwave integrated circuit (mmic) with active bias and input/output pre-matching. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). with single low voltage supply of 3.3v 20 db power gain between 2.4-2.5ghz, at a low quiescent current of 65ma. for +19dbm ofdm output power (64qam, 54mbps), the pa provides a low evm (error-vector magnitude) of 3.0%, and consumes 125 ma total dc current with the nominal 3.3v bias. with increased bias of 5 v evm is ~ 4% at 23 dbm. the LX5510 is available in a 16-pin 3mmx3mm micro-lead quad package (mlpq). the compact footprint, low profile, and excellent thermal capability of the mlpq package makes the LX5510 an ideal solution for medium- gain power amplifier requirements for ieee 802.11b/g applications important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? advanced ingap hbt ? 2.4 ? 2.5ghz operation ? single-polarity 3.3v supply ? low quiescent current icq ~65ma ? power gain ~20db @ 2.45ghz and pout = 19dbm ? total current 125ma for pout = 19dbm @ 2.45ghz ofdm ? evm ~ 3.0% for 64qam / 54mbps and pout = 19dbm ? small footprint (3 x 3 mm 2 ) ? low profile (0.9mm) applications ? ieee 802.11b/g product highlight package order info lq plastic mlpq 16 pin rohs compliant / pb-free transition dc: 0418 LX5510lq note: available in tape & reel. append the letters ?tr? to the part number. (i.e. LX5510lq-tr) this device is classified as esd level 0 in accordance with jesd22-a114-b, (hbm) testing. appropriate esd procedures should be observed when handling this device. l l x x 5 5 5 5 1 1 0 0
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? absolute maximum ratings dc supply voltage, rf off ...............................................................................6v collector current ........................................................................................400ma total power di ssipation....................................................................................2w rf input power........................................................................................... 15dbm operation ambient temper ature ...................................................-40 c to +85c storage temperature ....................................................................-65c to +150c peak package solder reflow temp. (40 seconds maximum exposure) ........ 260c (+0, -5) note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . x denotes respective pin designator 1, 2, or 3 thermal data lq plastic mlpq 16-pin thermal resistance - junction to c ase , jc 10 c/w thermal resistance - junction to a mbient , ja 50 c/w package pin out rf in rf in vb1 vb2 vcc rf out rf out vc1 vc2 * 1 2 3 4 5 6 7 8 9 1 0 11 12 13 14 15 16 * pad is ground n/c n/c n/c n/c n/c n/c n/c lq p ackage (bottom view) n/c = no connect rohs / pb-free 100% matte tin lead finish functional pin description name description rf in rf input. this pin is dc-shorted to gnd but ac -coupled to the transistor base of the first stage. vb1 bias current control voltage for the first stage. vb2 bias current control voltage for the second stage. the vb2 pin can be connected with the first stage control voltage (vb1) into a single reference voltage (referr ed to as vref) through an external resistor bridge. vcc supply voltage for the bias reference and control circui ts. this pin can be combined with both vc1 and vc2 pins, resulting in a single supply voltage (referred to as vc). rf out rf output. vc1 power supply for first stage amplifier. the vc1 feedlin e should be terminated with a 3.3 pf bypass capacitor, followed by a 8.2 nh blocking inductor at the supply side. vc2 power supply for second stage amplifier. the vc2 feedli ne should be driven with a 8.2 nh ac blocking inductor and 1 uf bypass capacitor. gnd the center metal base of the mlp package provides both dc and rf ground as well as heat sink for the power amplifier. p p a a c c k k a a g g e e d d a a t t a a
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? electrical characteristics test conditions: vc = 3.3v, vref = 2.85v, icq = 65ma, t a = 25c, unless otherwise specified LX5510 parameter symbol test conditions min typ max units ` section header frequency range f 2.4 2.5 ghz power gain at pout = 19dbm gp 20 db evm at pout = 19dbm 64gqam / 54mbps 3.0 % total current at pout = 19dbm ic_total 125 ma quiescent current icq 65 ma bias control reference current iref for icq = 65ma 1.2 ma small-signal gain s21 20 db gain flatness s21 over 100mhz 1 db gain variation over temperature s21 0c to +70c 1 db input return loss s11 10 db output return loss s22 10 db reverse isolation s12 -40 db second harmonic pout = 19dbm -55 dbc third harmonic pout = 19dbm -55 dbc total current at pout=23dbm 11 mbps cck 180 ma 2 nd side lobe at 23 dbm 11 mbps cck -52 dbc ramp-on time t on 10 ~ 90% 100 ns note: all measured data was obt ained on a 10 mil getek evalua tion board without heat sink. e e l l e e c c t t r r i i c c a a l l s s
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? 3.3v s parameter data 3.3v power sweep m 1 freq=2.400ghz db(s(2,1))=20.526 m7 freq=2.500ghz db(s(2,1))=19.355 2.2 2.4 2.6 2.8 2.0 3.0 -40 -30 -20 -10 0 10 20 30 -50 40 freq, ghz db(s(1,2)) db(s(2,1)) m1 m7 db(s(1,1)) db(s(2,2)) figure 1 (vc = 3.3v, vref = 2.85v, icq = 65ma) -10 -5 0 5 10 15 20 25 30 -25-20-15-10 -5 0 5 10 output power / dbm power /dbm, gain /db 0 50 100 150 200 250 300 350 400 current /ma output power gain current figure 2 (vc = 3.3v, vref = 2.85v, icq = 65ma, frequency=2.45 ghz, p1db=25 dbm) 3.3v evm data 3.3v acp data 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 22 output power /[dbm] evm_pa /[% ] 2.4 ghz 2.45 ghz 2.5 ghz figure 3 ? evm data with 54mb/s 64 qam ofdm (vc = 3.3v, vref = 2.85v, icq = 65ma) -60 -57.5 -55 -52.5 -50 -47.5 -45 0 2 4 6 8 10121416182022 output power /[dbm] acp_30 mhz /[dbc] 2.4 ghz 2.45 ghz 2.5 ghz figure 4 ? acp data with 54mb/s 64 qam ofdm (vc = 3.3v, vref = 2.85v, icq = 65ma) 3.3v spectrum with 23dbm 5v s parameter data figure 5 ? spectrum with 23dbm 11mb/s cck (vc = 3.3v, vref =2.85v, icq = 65ma, ic = 171ma) m 1 freq=2.400ghz db(s(2,1))=21.036 m7 freq=2.500ghz db(s(2,1))=20.043 2.2 2.4 2.6 2.8 2.0 3.0 -40 -30 -20 -10 0 10 20 30 -50 40 freq, ghz db(s(1,2)) db(s(2,1)) m1 m7 db(s(1,1)) db(s(2,2)) figure 6 ? s-parameter data (vc = 5v, vref = 2.85v, icq = 80ma) g g r r a a p p h h s s
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? 5v power sweep 5v evm data with 54mb/s figure 7 ? power sweep (vc = 5v, vref = 2.85v, icq = 80m a, frequency=2.45 ghz, p1db=29 dbm) 0 1 2 3 4 5 6 0 2 4 6 8 1012141618202224 output power /[dbm] evm_pa /[% ] 2.4 ghz 2.45 ghz 2.5 ghz figure 8 ? evm data with 54mb/s 64qam ofdm (vc = 5v, vref = 2.85v, icq =80ma,) 5v acp data with 54mb/s 5v spectrum with 25dmb -60 -57.5 -55 -52.5 -50 -47.5 -45 0 2 4 6 8 1012141618202224 output power /[dbm] acp_30 mhz /[dbc] 2.4 ghz 2.45 ghz 2.5 ghz figure 9 ? acp data with 54mb/s 64 qam ofdm (vc = 5v, vref = 2.85v, icq = 80ma) figure 10 ? spectrum with 25dbm 11mb/s cck (vc = 5v, vref = 2.85v, icq = 80ma, ic = 214ma, frequency = 2.45ghz) g g r r a a p p h h s s
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? evaluation board recommended bom location value c1 2.2 pf (0402) c2 2.4 pf (0402) c3 3.3 pf (0402) c4,c5 1 uf (0603) l1,l2 8.2 nh(0402) r1 350 ? (0402) r2 200 ? (0402) tl1 30/22 mil (l/w) tl2 100/10 mil (l/w) tl3 60/10 mil (l/w) substrate 10 mil getek r =3.9, tan = 0.01 50 ? microstrip width: 22 mil e e v v a a l l u u a a t t i i o o n n
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 7 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? package dimensions lq 16-pin mlpq 3x3 e d e b e2 d2 a a3 a1 l k pin 1 indicator or or or e d e b e2 a a1 l k d2 l1 m illimeters i nches dim min max min max a 0.80 1.00 0.031 0.039 a1 0 0.05 0 0.002 a3 0.20 ref 0.008 ref b 0.18 0.30 0.007 0.012 d 3.00 bsc 0.118 bsc e 3.00 bsc 0.118 bsc e 0.50 bsc 0.020 bsc d2 1.30 1.55 0.051 0.061 e2 1.30 1.55 0.051 0.061 k 0.2 - 0.008 - l 0.35 0.50 0.012 0.020 l1 - 0.15 - 0.006 note: 1. dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006?) on any side. lead dimension shall not include solder coverage. 2. due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. package type will be consistent within the smallest individual container. m m e e c c h h a a n n i i c c a a l l s s
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 8 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? tape and reel tape and reel specification 4.00mm 1.75mm 5.5 0.05mm 3.30mm ? 1.50mm ? 1.50mm 12.00 0.3mm 1.10mm 0.30mm part orientation top view side view 3.30mm 8.00mm 10.6mm ? 13mm +1.5 -0.2 ? 330mm 0.5 ? 97mm 1.0 2.2mm 13mm +1.5 m m e e c c h h a a n n i i c c a a l l s s
LX5510 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 9 copyright ? 2000 rev. 1.0d 2005-08-18 www. microsemi . com ingap hbt 2.4 ? 2.5 ghz power amplifier tm ? notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s
|
